The Research on Growth Temperature of Ge/Si Thin Films Grown by Magnetron Sputtering

摘要

The films of Ge and Si were grown on the substrate Si(100) by magnetron sputtering at 2.5 Pa Ar Pressure. The growth temperature of films was 100°C ,250°C,400°C and 550°C. The structure and composition were analysised by Raman scattering. The poly-crystal peak and crystal peak of Ge were observed in these films. The results indicate that the single crystal film of Ge was prepared at the substrate temperature of 400°C. Both Si-Si bond and Ge-Ge bond were observed the peaks of optic phonons and acoustic phonons in Raman spectrum. The peak of acoustic phonons of Ge was 98cm~-1 and that of Si was 170cm~-1