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Study on Porous Silicon with P-N Junction Sensor for Humidity Measurement

机译:具有P-N结传感器的多孔硅研究湿度测量

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摘要

Porous materials used for humidity sensing have been commercialized. In this paper, the preparation and humidity sensing characteristics of porous silicon with P-N junctions (PNJPS) are studied. PNJPS is made by electro-chemical anodic etched method from silicon wafers with P-N junctions. Its porous structure is verified by scanning electronic micrograph. Experiments also show that PNJPS has high sensitivity, short response time (less than 30 seconds), and long-term stability.
机译:用于湿度感测的多孔材料已被商业化。本文研究了具有P-N结(PNJPS)的多孔硅的制备和湿度感测特性。 PNJP通过电化学阳极蚀刻方法由具有P-N结的硅晶片制成。通过扫描电子显微照片来验证其多孔结构。实验还表明,PNJP具有高灵敏度,短响应时间(小于30秒)和长期稳定性。

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