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The effects of doping dopants on the characteristics of low temperature nano-sized SrTiO_3.5 oxygen gas sensor

机译:掺杂掺杂剂对低温纳米SRTIO_3.5氧气传感器特性的影响

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Ag_2O-doped, Pt-doped and pure synthesized SrTiOj.j low temperature oxygen gas sensors with 400 °C annealing temperature were fabricated by screen-printing technique. The nano-sized AgoO-doped, Pt-doped and pure synthesized SrTiO3.g powders were produced using high-energy ball milling technique at room temperature, respectively. The effects of doping dopants on the characteristics of SrTiC>3.a materials and sensors at the low temperature were studied by XRD, DTA/TGA, TEM and the gas sensor characterization system using National Instruments Labview 6.1 system. The results show that the AgiO and Pt dopants effectively decrease the grain size of the materials with no change in the perovskite phase. It confirms the structure stability of the synthesized materials. The Pt dopant improves the response properties of the pure material, while AgiO dopant makes it lose the sensing property at 40 °C operating temperature.
机译:通过丝网印刷技术制造Ag_2O掺杂,PT掺杂和纯合成的SRTIOJ.J低温氧气传感器,具有400°C退火温度。在室温下,使用高能球铣削技术生产纳米大小的Agoo掺杂,Pt掺杂和纯合成的Srtio3.g粉末。 XRD,DTA / TGA,TEM和气体传感器表征系统研究了掺杂掺杂剂对Srtic> 3.a材料和传感器的特性的影响。使用National Instruments LabVIEW 6.1系统。结果表明,AgiO和Pt掺杂剂有效降低了钙钛矿阶段没有变化的材料的晶粒尺寸。它证实了合成材料的结构稳定性。 PT掺杂剂改善了纯材料的响应性能,而AgiO掺杂剂使其在40°C的工作温度下失去传感性能。

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