Preparation of SrBi_2Ta_2O_9 Ferroelectric Thin Films by Liquid Source Misted Chemical Vapor Deposition Method Using Inorganic Salt Solution

摘要

A liquid source misted chemical vapor deposition (LSMCVD) system was used to deposit SrBi_2Ta_2O_9 ferroelectric thin films on Pt/TiO_2/SiO_2/Si substrates using strontium nitrate, bismuth nitrate and fluorine tantalum acid as the starting ingredients. Citric acid, ethylene glycol, and ethylenediamine-tetraacctic acid were employed as chelating agents to form homogeneous and stable sol. A density, homogenous, crack-free and c-axis oriented SrBi_2Ta_2O_9 thin films were prepared successfully and the resultant thin film exhibits the ferroelectric properties of 2P_r of 3.8 C/cm~2, 2E_c of 60kV/cm at ± 3.5 V, respectively.