【24h】

Tuning 2D photonic crystals

机译:调整2D光子晶体

获取原文

摘要

We demonstrate three ways in which the optical band-gap of 2-D macroporous silicon photonic crystals can be tuned. In the first method the temperature dependence of the refractive index of an infiltrated nematic liquid crystal is used to tune the high frequency edge of the photonic band gap by up to 70 nm for H-polarized radiation as the temperature is increased from 35 to 59?C. In a second technique we have optically pumped the silicon backbone using 150 fs, 800 nm pulses, injecting high density electron hole pairs. Through the induced changes to the dielectric constant via the Drude contribution we have observed shifts upt to 30 nm of the high frequency edge of the E-polarized band-gap. Finally, we show that below-band-gap radiation at 2.0 and 1.7 μm can induce changes to the optical properties of silicon via the Kerr effect and tune the band edges of the 2-D macroporous silicon photonic crystal.
机译:我们证明了三种方式,其中可以调谐2-D大孔硅光子晶体的光学带隙。在第一种方法中,渗透向列液晶的折射率的温度依赖性用于将光子带隙的高频边缘曲调,对于H偏振辐射,随着温度从35升至59时,H偏振辐射将电动带隙的高达70mm旋转? C。在第二种技术中,我们使用150fs,800nm脉冲光学泵浦硅骨干,注入高密度电子孔对。通过诱导介电常数通过吹出贡献的介电常数,我们观察到从E偏振带间隙的高频边缘的升高到30nm。最后,我们表明,在2.0和1.7μm处下面的带间隙辐射可以通过克尔效应引起对硅的光学性质的变化并调整2-D大孔硅光子晶体的带边。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号