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Performance limitations of small format high speed infrared arrays for active control loops in interferometry and adaptive optics

机译:干涉和自适应光学活动控制循环小型高速红外线阵列的性能限制

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The detector mounted in the VLTI fringe sensor FINITO is a 256x256 HgCdTe array with a cut-off wavelength of 1.9 micron. The same arrays having cut-off wavelengths of 2.5 micron will be used in the tip tilt sensor IRIS and the PRIMA instrument of the VLT interferometer. The arrays are part of an active control loop with integration times as short as a few hundred microseconds. The fringe tracker FINITO uses only 7 pixels of the array. To take advantage of the four parallel channels of the PICNIC multiplexer, the pixels illuminated in each quadrant are positioned at the same location within the quadrants. A noise analysis of the PICNIC array shows that the main sensitivity limitation of the array is contained in the low frequency part of the noise power spectrum. Similar behaviour has been observed with other infrared arrays. In an effort to optimize the unit cell pixel buffer to achieve high speed and low noise, a prototype multiplexer is being developed at Rockwell for adaptive optics. However, low frequency noise may still be the limiting factor dominating the noise performance of infrared arrays. To overcome this noise barrier, detector architectures have to be envisaged which should allow double correlated sampling on shorter time scales than a full exposure. This might be accomplished by some kind of gate in the IR material which allows charge to be shifted from an integrating well in the infrared pixel to a small sensing node capacitance of the multiplexer unit cell buffer.
机译:安装在VLTI条纹传感器Finito中的检测器是256x256 HGCDTE阵列,截止波长为1.9微米。具有2.5微米的截止波长的相同阵列将用于尖端倾斜传感器虹膜和VLT干涉仪的PRIMA仪器。阵列是活动控制循环的一部分,具有短短为几百微秒的集成时间。 Finito的边缘跟踪器仅使用7个像素的数组。为了利用野餐多路复用器的四个并行通道,每个象限中照射的像素位于象限内的相同位置。野餐阵列的噪声分析表明,阵列的主要灵敏度限制包含在噪声功率谱的低频部分中。与其他红外线阵列相似地观察到类似的行为。为了优化单元电池像素缓冲器以实现高速和低噪声,在罗克韦尔以进行自适应光学器件开发了原型多路复用器。然而,低频噪声可能仍然是主导红外阵列的噪声性能的限制因素。为了克服这种噪声屏障,必须设想检测器架构,这应该允许在短时间比例上进行双相关采样而不是完全曝光。这可以通过IR材料中的某种栅极来实现,其允许电荷从红外像素中的集成阱移位到多路复用器单元电池缓冲器的小传感节点电容。

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