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The quantum cascade lasers: the semiconductor solution for lasers in the 3-5μm wavelength region

机译:量子级联激光器:3-5μm波长区域中的激光器半导体解决方案

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The quantum cascade laser is a semiconductor light source based on resonant tunnelling and optical transitions between quantised conduction band states. In these devices the principles of operation are not based on the physical properties of the constituent materials, but arise from the layer sequence forming the heterostructure. The quantum design and the control of the layer thickness, down to an atomic mono-layer, allows one to ascribe into a semiconductor crystal, artificial potentials with the desired electronic energy levels and wavefunctions. In recent years the performance of quantum cascade lasers has improved markedly and this semiconductor technology is now an attractive choice for the fabrication of mid-far infrared lasers in a very wide spectral range (3.5-160 μm). At present, the best performances are reached at wavelength between 5-10 μm, but recent results on new material systems with deeper quantum wells are indicating that this technology will be soon available also in the 3-5 μm spectral region.
机译:量子级联激光器是一种基于共振隧穿和量化导带状态之间的光学跃迁的半导体光源。在这些装置操作原理不是基于构成材料的物理性能,但是从形成异质层序列产生。量子设计和层厚度的控制,下降到一个原子单层,允许一个归于到半导体晶体,用人工的电位所需的电子能级和波函数。近年来量子级联激光器的性能已经显着地改进,现在该半导体技术是激光器中间远红外线的在一个很宽的光谱范围(3.5-160微米)制造一个有吸引力的选择。目前,最好的表现是在5-10微米之间的波长达到了,但最近与更深的量子阱新型材料体系的结果表明,这种技术会很快也可用在3-5微米光谱区。

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