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ACD Co-P Interlayers in Soldering with Tin Alloys for Microelectronics

机译:ACD CO-P硅层用锡合金用于微电子

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Autocatalytic cobalt is proposed as a barrier metallization for copper in lead-free soldering. Results about solder reaction and diffusion of autocatalytic cobalt with Sn-Ag-Cu and Sn-Pb alloys are presented. Bonding and solderability of autocatalytic cobalt are discussed. Solder reaction of autocatalytic cobalt with eutectic tin-lead and tin-silver-copper alloys is characterized by the formation of an homogeneous interface with thin interdiffusion layer. A thick interdiffusion layer is observed between NiP and solder alloy, with formation of brittle intermetallic compounds, mainly Ni{sub}3Sn{sub}4 and Ni{sub}3P. The formation of a very thin interlayer was observed in the case of the cobalt finish, showing a much lower cobalt and tin interdiffusion. The Au layer has a minor role on the soldering behavior of Ni and Co with Sn. Similar results are obtained with BGA balling. The contact angle of Sn-Pb and Sn-Ag-Cu on CoP/Au after soldering was about 5° in the two cases, while those for SnPb and SnAgCu on NiP/Au were about 5° and 15° respectively. Wetting time is lower for CoP than for NiP for both solder alloys.
机译:在无铅焊接中提出了自催化剂作为铜的阻隔金属化。提出了对Sn-Ag-Cu和Sn-Pb合金的焊料反应和自催化钴的扩散。讨论了自催化钴的粘接和可焊性。通过与共晶锡铅和锡 - 银铜合金的自催化钴和锡 - 银 - 铜合金的焊料反应的特征在于形成具有薄的间隔层的均匀界面。在辊隙和焊料合金之间观察到厚的间隔层,形成脆性金属间化合物,主要是Ni {Sub} 3Sn {Sub} 4和Ni {Sub} 3P。在钴的含量的情况下观察到非常薄的中间层的形成,显示出更低的钴和锡间隔。 Au层对Ni和Sn的CO和CO的焊接行为具有次要作用。用BGA球体获得类似的结果。在两种情况下,SN-Pb和Sn-Ag-Cu上的Cop / Au上的接触角为约5°,而NIP / Au上的SnPB和SnAGCU的那些分别为约5°和15°。 COP的润湿时间比对于两个焊料合金的辊隙更低。

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