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X pinch source characteristics for x-rays above 10 keV

机译:X X射线X射线源特性为10 keV

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X pinch radiation produced by electron beams accelerated in the X pinch minidiode ranging in energy from 10 to 100 keV has been studied and used to image a variety of different objects. The experiments have been carried out using the XP pulser (470 kA, 100 ns) at Cornell University and the BIN pulser (280 kA, 120 ns) at the P. N. Lebedev Physical Institute. This electron-beam-generated x-ray source's geometric, temporal and spectral properties have been studied over different energy ranges between 10 and 100 keV. The imaging was carried out in a low magnification scheme, and spatial resolution of a few tens of μm was demonstrated.
机译:已经研究了通过10至100keV的x捏迷你码加速的电子束产生的X捏辐射,并用于图像各种不同的物体。在P. N.Lebedev的物理研究所使用康奈尔大学和隆脉冲器(280 ka,120ns)的XP脉冲仪(470ka,100ns)进行了实验。该电子束产生的X射线源的几何,时间和光谱特性已经在10到100 keV之间的不同能量范围内进行了研究。成像在低放大率方案中进行,并证明了几十μm的空间分辨率。

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