Determination of the charge-trapping characteristics of buried oxides using a 10-keV X-ray source

摘要

Oxide photocurrent measurements and capacitance-voltage shift measurements were performed with a 10-keV X-ray source on metal-oxide-semiconductor (MOS) buried-oxide (BOX) capacitors to characterize the charge motion and trapping properties of the BOX layer. Photocurrents measured in the BOX are about one-half of the expected theoretical current that would be measured if both charge carriers moved through the oxide. Results form the photocurrent measurements together with capacitance-voltage measurements and theoretical modeling indicate (for radiation-generated charges escaping initial recombination) that holes are essentially trapped in place and most electrons move through the bulk oxide.