AlGaAs-GaAs heterostructure δ-doped field-effect transistor (δ-FET)

摘要

Molecular-beam epitaxy - grown heterostructure field-effect transistors employing a delta-doped channel have been fabricated and investigated. The results of studies of DC parameters of δ-FET's of different configuration can be regarded as the best obtained by other authors for single δ-doped structures These data as well as the results of modeling and simulation allow one to recommend the studied δ-FET's for digital and analog applications.