Electron and hole velocity overshoots in an Al_(0.3)Ga_(0.7)As-based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy

摘要

We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al_(0.3)Ga_(0.7)As-based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.