We have studied the impact of intentional contamination by various lanthanides (La, Lu, Pr, Gd) at doses of 3E11-1E14 cm"2, upon the electrical behavior of a 130nm technology transistors. Even at the lowest levels, contaminants spun on just prior to gate oxide growth show impact upon transistor behavior. The elements impact the device primarily by acting as fixed charge in the dielectric, but also by allowing gate and diode leakage.
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