Analysis of Dislocation Structures in Bulk SiC Single Crystal by Synchrotron X-ray Topography

摘要

The detailed properties of the dislocations of SiC crystals were analyzed by means of transmission X-ray topography using ultrahigh-quality substrates manufactured by RAF (repeated a-face) growth method. From this analysis, we revealed the detailed features of one type of basal plane dislocations and two types of threading dislocations. The basal plane dislocations were screw type with Burgers vector were parallel to the 110 direction. One of the threading dislocations was mixed type close to screw dislocation parallel to the growth direction with Burgers vector of 1c+na (n=0, 1, 2, ). Another was the edge type parallel to the c-axis, which lay between two basal plane dislocations. Moreover, these dislocations were found to be connecting with each other, constituting large network structures.