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MgZnO/ZnO HETEROSTRUCTURES FOR UV LIGHT EMITTERS AND SPINTRONIC APPLICATIONS: MATERIAL GROWTH AND DEVICE DESIGN

机译:用于UV光发射器和纺锤形应用的MgzNo / ZnO异质结构:材料生长和装置设计

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High quality MgZnO epitaxial layers and MgZnO/ZnO heterostructures were grown on GaN using RF plasma-assisted molecular-beam epitaxy (MBE). Optical and crystallographic properties of the Mg_xZn_(1-x)O epitaxial layers and heterostructures based on them are reported. Strong CL emission at ~377.5 nm with FWHM of ~ 17 nm was observed from thick ZnO films. Novel band-gap engineering of type-Ⅱ/type-Ⅰ hexagonal heterostructures incorporating the strong piezoelectric and spontaneous polarization fields in ZnMgO and AlGaN-based materials was investigated. Band structures of various MgZnO/AlGaN/GaN heterojunctions were simulated, revealing a strong hole confinement near n-ZnO/p-AlGaN interface with a hole sheet density up to 1.8 x 10~(13) cm~(-2). The formation of such a hole accumulation layer near the p-n junction can increase the probability of radiative recombination under forward bias. Introduction of the MgZnO/ZnO heterojunction provides an additional confinement for electrons injected into the ZnO active region at forward bias. Based on these simulations, MgZnO/ZnO/AlGaN/GaN triple-heterostructure (THS) p-n junction light emitting diodes (LEDs) were fabricated and characterized. Electrical and optical characteristics of THS LEDs are discussed. Ⅰ-Ⅴ characteristics of the LEDs show a strong rectifying behavior with a turn on voltage of ~3.2-3.5V. The series resistance of the LEDs, which is dominated by the conductance of the p-layer was observed to decrease with increasing temperatures. Optical emission with a peak intensity at ~ 390nm was observed from these structures. This is attributed to optical transitions near ZnO/AlGaN interface. Light emission from the THS LEDs was detected for temperatures up to 650K, suggesting an excitonic origin for the observed optical transitions. For applications in spin-polarized-enhanced light emitters, dilute magnetic doped ZnO films were also studied. Experimental measurements of the ferromagnetic properties of ZnO films doped with Mn by ion implantation are reported. Superconducting quantum interference device (SQUID) magnetometry and RT hysteresis loop measurements demonstrated that the ZnO:Mn films are ferromagnetic at room temperature with a normalized magnetization of about 1 emu/cm~3. These results show that ZnO is also a candidate for spintronic device applications.
机译:使用RF等离子体辅助分子束外延(MBE)在GaN上生长了高质量的MGZNO外延层和MgZnO / ZnO异质结构。据报道了Mg_XZN_(1-X)O外延层的光学和晶体性质和基于它们的异质结构。从厚的ZnO薄膜观察到〜377.5nm的强度〜377.5nm的发射。研究了Ⅱ型/Ⅰ型六方异质结构的新型带隙工程,其含有ZnMGO和基于Algan基材料的强压电和自发极化场。模拟各种MgZNO / AlGaN / GaN杂交的带状结构,揭示了N-ZnO / P-AlGaN界面附近的强孔限制,孔板密度高达1.8×10〜(13)cm〜(-2)。在P-N结附近的这种空穴积聚层的形成可以增加前方偏压下辐射重组的可能性。 MGZNO / ZnO异结的引入为在正向偏压下注入ZnO有源区的电子提供了额外的限制。基于这些模拟,制造和表征MgZNO / ZnO / AlGaN / GaN三倍异质结构(THS)P-N结发光二极管(LED)。讨论了THS LED的电气和光学特性。 Ⅰ-n LED的特性显示出强大的整流行为,电压为3.2-3.5V。观察到由P层的电导支配的LED的串联电阻以随着温度的增加而降低。从这些结构中观察到〜390nm峰强度的光学发射。这归因于ZnO / AlGaN接口附近的光学转换。检测到THS LED的光发射,对于高达650K的温度,表明观察到的光学过渡的激动起源。对于纺丝偏振增强光发射器中的应用,还研究了稀磁性掺杂ZnO薄膜。报道了通过离子注入掺杂掺杂用Mn的ZnO膜的铁磁性的实验测量。超导量子干涉装置(鱿鱼)磁力测定和RT滞后回路测量证明ZnO:Mn膜在室温下是铁磁性,其归一化磁化为约1 emu / cm〜3。这些结果表明,ZnO也是用于旋转式设备应用的候选者。

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