ENHANCED LIGHT EXTRACTION AND SPONTANEOUS EMISSION FROM TEXTURED GaN TEMPLATES FORMED DURING GROWTH BY THE HVPE METHOD

摘要

In this paper, we discuss the growth and characterization of textured GaN templates. GaN smooth and textured templates, auto-doped n-type at a level of 10~(19) cm~(-3), have been grown by the halide vapor-phase epitaxy (HVPE) method. We find that the surface texture is such that the reflectivity is suppressed to approximately 1% in the entire spectral region. The PL peak intensity from the textured GaN template was found to be significantly higher (approximately 55 times) compared to that from identically produced and similarly doped atomically smooth GaN templates. Such GaN Templates can be used as substrates for growth of Ⅲ-Nitride LEDs with improved internal and extraction efficiency.