In this work, one-dimensional wire structures of gallium nitride (GaN) and aluminium nitride (AlN) are studied by first-principle methods. These wire structures have interesting properties different from those of the bulks. We devised two types of wire structures named axial joint model and equatorial joint model. These initial structures are optimized and energy band structures of these optimized structures are calculated. The energy band gaps of GaN nanowires are 0.26 eV in the axial bond model and 0.08 eV in the equatorial one and those of AlN nanowires are 2.68 eV in the axial model and 0.16 eV in the equatorial one.
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