PHOTOLUMINESCENCE OF Fe-DOPED INP SINGLE CRYSTALS PRODUCED WITH VARIOUS WAFER PROCESSES

摘要

Semi-insulating Fe-doped InP single crystals are grown in this work using the vertical in-situ synthesis and single crystal growth method in a VGF furnace. The substrates, sliced from the head (close to the seed), middle and tail portions of the ingot, are subjected to the various wafer processes of slicing, solvent cleaning, lapping and polishing. Wafer characteristics are analyzed by photoluminescence (PL) sp ectroscopy and Hall m easurements. The PL features suggest that the resulting topograms are significantly influenced by the surface properties and crystal qualities of the Fe-InP wafer. A reference index of the epi-ready wafer could be selected from the superior PL topograms. The Fe doping concentration also influences the optical and electrical properties. Specifically; the wavelength of the PL is proportional to the Fe concentration, while the intensity reveals the opposite trend, and this might provide a calibration method to transform scanning PL topograms into a quantitative Fe distribution.