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Impurity Effects on Pore Formation at Al_2O_3/Alloy Interfaces

机译:Al_2O_3 /合金界面对孔形成的杂质作用

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The adhesion of Al_2O_3 scales on commercial grade alloys that do not contain a reactive element is usually poor due to the presence of 10-50 wppm of sulfur impurity, and/or of pores that formed at the scale/alloy interface. Sulfur is usually believed to segregate to the interface to weaken the interfacial bonding and to stabilize interfacial pores. By using field emission scanning Auger microscopy, the distribution of sulfur on pores and on oxide imprinted areas at Al_2O_3/FeAl interfaces was precisely determined. Interfacial pore growth as a function of oxidation time was obtained from scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses. The effects of sulfur segregation, surface impurity and reactive elements on pore nucleation and growth are discussed.
机译:Al_2O_3刻度对不含反应元素的商业级合金的粘合性通常差,由于存在10-50wppm的硫杂质,和/或在刻度/合金界面形成的孔。通常认为硫被认为分离在界面中以削弱界面键合并稳定界面孔隙。通过使用现场发射扫描螺旋钻显微镜,精确地确定了孔上的硫在孔上和氧化物印迹区域的分布。从扫描电子显微镜(SEM)和原子力显微镜(AFM)分析中获得作为氧化时间的互渗孔的缺陷。讨论了硫偏析,表面杂质和反应元件对孔成核和生长的影响。

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