ELECTRICAL CHARACTERIZATION TECH-NIQUESFORSEMICONDUCTOR-SILICON DIOXIDE INTERFACE - A REVIEW

摘要

In this paper,we present detailed experimental results from the electrical characterization of silicon-silicon dioxide and semiconducting polymer-silicon dioxide interfaces. For all experiments,we have used field-effect transistors as the device under test (DUT). We have used the following techniques for our electrical characterization studies - current-voltage measurements with the transistor in forward and reverse modes;floating gate measurements;charge pumping;deep-level transient spectroscopy;and low frequency noise spectroscopy. A main idea of our experiments is to use standard test structures to investigate the semiconductor-oxide interface and not to design and use specialized DUTs. This work reviews and extends our previous published work.