Deposition and characterization study of low-stress LPCVD silicon nitride films for MEMS applications

摘要

Low-stress silicon nitride films are of great interest in the field of microelectromechanical systems where stresses are known to drastically influence the mechanical behaviour of micromachined structures. In this work, we report the deposition of silicon nitride (SiN) films by LPCVD from dichlorosilane and ammonia decomposition. The films properties are discussed as a function of the process parameters.