Terahertz Detection of Many-Body Signaturesin Semiconductor Heterostructures

摘要

This article reviews our THz-spectroscopy results on the intra-excitonictransitions of different III–V multi quantum well structures. Following a brief in-troduction to THz Time-Domain Spectroscopy a detailed description to the dataanalysis and extraction of refractive index and absorption is given. The behavior ofthe induced excitonic THz absorption in GaAs/(AlGa)As and (GaIn)As/GaAs multiquantum well structures is compared. Good agreement with previous experimentson the GaAs/(AlGa)As system [1, 21 is obtained. A distinctly different behaviour isobserved for the (GaIn)As/GaAs structures.