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Quantum confinement and excitonic effects in vertically coupled quantum dots

机译:垂直耦合量子点中的量子限制和激发效应

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Recently, nearly perfect vertically coupled quantum dots have been constructed using self-organization method [1]. It has been demonstrated that either a blue shift or a red shift of the fundamental transition energy can be realized in different coupling conditions and it was proposed that this is due to the interplay of strain and electron - hole Coulomb interaction [2]. In this work, properties of excitons in vertically coupled GaAs/AlGaAs quantum dots were investigated using the variational method within the envelope function and effective mass approximations. It was found that the optical transition energy is reduced when the thickness of the spacer layer becomes less than about one exciton Bohr radius. This is a result of increased space extension of exciton due to the penetration of carrier wave functions into the spacer layer and corresponding reduction in confinement energy and Coulomb interaction between the electron and the hole.
机译:最近,几乎完美的垂直耦合量子点已经使用自组织方法构建[1]。已经证明,在不同的偶联条件下可以实现蓝色移位或基础过渡能量的红色偏移,提出了这是由于菌株和电子 - 孔库相互作用的相互作用[2]。在这项工作中,使用包络函数和有效质量近似的变分方法来研究垂直耦合的GaAs / Algaas量子点中的激子的性质。发现当间隔层的厚度变得小于一个激子BoHR半径时,光学过渡能量减小。这是由于载波函数的渗透到间隔层的渗透而增加了激子的空间延伸的结果,并且在电子和孔之间的限制能量和库仑相互作用的相应降低。

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