EFFECT OF ANNEALING AT ARGON PRESSURE UP TO 1.2 GPa ON HYDROGEN - PLASMA ETCHED AND HYDROGEN - IMPLANTED SINGLE - CRYSTALLINE SILICON

摘要

Effect of annealing at up to 1400 K under argon pressure up to 1.2 GPa on hydrogen - plasma - etched and hydrogen - implanted Czochralski or FZ silicon was investigated by SIMS, X - ray, TEM, electrical, infrared and photoluminescence methods. External stress during annealing of hydrogen - containing Si results in suppression of hydrogen out - diffusion but in its pronounced diffusion into sample depth, in stress - stimulated creation of small bubbles, thermal donors and crystallographic defects but in preventing of sample splitting.