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Fabrication by inclined-substrate deposition of biaxially textured buffer layer for coated conductors

机译:用于涂覆导体的双轴纹理缓冲层的倾斜基板沉积制造

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Inclined substrate deposition (ISD) offers the potential for rapid production of high-quality biaxially textured buffer layers suitable for YBCO-coated conductors. We have grown biaxially textured MgO films by ISD at deposition rates of 2O- 100 A/sec. Columnar grain structures with a roof-tile-shaped surface were observed in the ISD-MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD-MgO films are titled at an angle from the substrate normal. A small phi-scan full-width at half maximum (FWHM) of ≈9° was observed on MgO films deposited at an inclination angle of 55°. YBCO films were also grown on ISD-MgO-buffered Hastelloy C276 substrates by pulsed laser deposition. We obtained a critical current density of 2  250L?10{sup}5 A/cm{sup}2 at 77 K in self-field on 0.5-μm-thick, 0.5-cm-wide, 1-cm-long samples. This work has demonstrated that biaxially textured ISD MgO buffer layers deposited on metal substrates are promising candidates for fabrication of high-quality YBCO-coated conductors.
机译:倾斜基板沉积(ISD)提供了适用于YBCO涂覆的导体的高质量双轴纹理缓冲层的快速生产的潜力。我们通过ISD在沉积速率为2o-100a / sec的沉积速率方面生长了双轴纹理的MgO膜。在ISD-MgO膜中观察到具有屋顶瓦片形表面的柱状晶粒结构。 X射线极值图分析显示ISD-MgO膜的(002)平面呈与基材正常的角度标题。在沉积在55°的倾斜角度的MgO膜上观察到≈9°的半最大(FWHM)的小Phi扫描全宽。通过脉冲激光沉积,YBCO薄膜也在ISD-MgO缓冲的Hastelloy C276基板上生长。我们在0.5μm厚的0.5cm宽,1cm的样品上的自场的77k处获得的临界电流密度为2÷250L?10 {sup} 5a / cm {sup} 2。该工作表明,沉积在金属基材上的双轴纹理ISD MgO缓冲层是用于制造高质量YBCO涂覆导体的候选者。

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