Effect of false writing of information in optical processor and optical storage devices realizing on the base of nonlinear absorption

摘要

Physical reasons for the development of false writing information in 3D-memory devices realizing on nonlinear absorption are analyzed. It is shown there are some physical mechanisms, which induce writing of information in additional domains. These domains can be stationary or can be moving periodically or not as in positive or in negative direction of longitudinal axis. The formation of additional domains with written information due to transformation of initial Gaussian beam to ring beam is described. The existence of moving domain under the action of collimate ring beam is discussed. This mechanism of moving domain realization is different from well-known mechanism of domain formation under the action of focused Gaussian beam. In this paper the formation of additional domains of written information due to distinguish of beam radius on transverse coordinates are shown. Writing of false information occurs for focused laser beam if using VT- relaxation process in experimental setup. An influence of layer-like structure on appearance of false information domains is discussed as well.