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Sb-terminated InAs(001)-(2×4) and(2×8) studied using scanning tunneling microscopy and ab initio density functional theory

机译:使用扫描隧道显微镜和AB Initio密度泛函理论研究了SB终止的INA(001) - (2×4)和(2×8)

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We have studied the structure of MBE-grown InAs(001)-(2×4) surfaces exposed to low Sb{sub}2 fluxes by scanning tunneling microscopy (STM) and ab initio density functional theory (DFT). Experimentally, we observe an Sb-terminated α2(2×4) phase over a wide range of temperatures (400-510 °C) for low Sb{sub}2 flux (<0.1 ML/s), whereas temperature and As{sub}2 flux must be carefully controlled to achieve the same As-terminated surface structure. At lower temperatures, we observe indications of an Sb-terminated (2×8) symmetry surface phase, and we report briefly on its proposed structure and stability, as well as its possible role in subsequent formation of the Sb-terminated (1×3) phase found at typical Sb{sub}2 fluxes used during heterostructure growth.
机译:我们研究了通过扫描隧道显微镜(STM)和AB Initio密度泛函理论(DFT)暴露于低Sb {} 2通量暴露于低Sb {sub} 2通量的MBE-生长的INA(001) - (2×4)表面的结构。实验,我们在低Sb {sub} 2通量(<0.1ml / s)的各种温度(400-510℃)上观察到Sb终止的α2(2×4)相,而温度和{sub必须仔细控制2个磁通以实现相同的封端表面结构。在较低的温度下,我们观察SB终止(2×8)对称性表面阶段的适应症,我们将简要地报告其提出的结构和稳定性,以及其在随后形成SB终止的可能作用(1×3在异质结构生长期间使用的典型Sb {亚} 2助熔剂发现的相位。

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