首页> 外文会议>Symposium H, "Progress in semiconductor materials for optoelectronic applications" >Sb-terminated InAs(001)-(2x4) and (2x8) studied using scanning tunneling microscopy and ab initio density functional theory
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Sb-terminated InAs(001)-(2x4) and (2x8) studied using scanning tunneling microscopy and ab initio density functional theory

机译:使用扫描隧道显微镜和AB Initio密度泛函理论研究的SB终止INA(001) - (2x4)和(2x8)研究

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We have studied the structure of MBE-grown InAs(001)-(2x4) surfaces exposed to low Sb_2 fluxes by scanning tunneling microscopy (STM) and ab initio density functional theory (DFT). Experimentally, we observe an Sb-terminated α2(2x4) phase over a wide range of temperatures (400-510°C) for low Sb_2 flux (<0.1 ML/s), whereas temperature and As_2 flux must be carefully controlled to achieve the same As-terminated surface structure. At lower temperatures, we observe indications of an Sb-terminated (2x8) symmetry surface phase, and we report briefly on its proposed structure and stability, as well as its possible role in subsequent formation of the Sb-terminated (1x3) phase found at typical Sb_2 fluxes used during heterostructure growth.
机译:通过扫描隧道显微镜(STM)和AB Initio密度泛函理论(DFT)研究了暴露于低Sb_2助熔剂的MBE-生长的INA(001) - (2x4)表面的结构。实验,我们在宽范围的温度(400-510℃)上观察到低Sb_2助焊剂(<0.1ml / s)的Sb终止α2(2x4)相,而必须仔细控制温度和AS_2磁通以实现相同的终止表面结构。在较低的温度下,观察SB终止(2x8)对称性表面阶段的适应症,我们简要介绍其提出的结构和稳定性,以及其在随后形成的SB终止(1x3)阶段的可能作用在异质结构生长期间使用的典型SB_2助熔剂。

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