On the scaling of exciton and impurity binding energies and the virial theorem in semiconductor quantum wells and quantum-well wires

摘要

We have used the variational and fractional-dimensional space approaches in a study of the virial theorem value and scaling of the shallow-donor binding energies versus donor Bohr radius in GaAs-(Ga,Al)As semiconductor quantum wells and quantum-well wires. A comparison is made with previous results with respect to exciton states. In the case the donor ground-state wave function may be approximated by a D-dimensional hydrogenic wave function, the virial theorem value equals 2 and the scaling rule for the donor binding energy versus quantum-sized Bohr radius is hyperbolic, both for quantum wells and wires. In contrast, calculations within the variational scheme show that the scaling of the donor binding energies with quantum-sized Bohr radius is in general non-hyperbolic and that the virial theorem value is non-constant.