2.22-inch qVGA a-Si TFT-LCD Using a 2.5 um Fine-Patterning Technology by Wet Etch Process

摘要

2.22-inch qVGA (240 320) amorphous silicon thin film transistor liquid active matrix crystal display (a- Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated because the 2.5 um fine pattern formation technique is combined with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um finepatterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.