The Dependence of Mechanical Strain on a-Si:H TFTs and Metal Connection Fabricated on Flexible Substrate

摘要

We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of 160 C with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a- Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of 10 m for connection on flexible substrate can sustain with curvature radius 2.5 cm.