The Dependence of Mechanical Strain on a-Si:H TFTs and Metal Connection Fabricated on Flexible Substrate

摘要

We evaluated a-Si:H TFTs fabricated on polyimidernsubstrate (PI) at the highest temperature of 160 Crnwith uniaxial and tensile strain to imitate flexiblerndisplay. With tensile strain, the threshold voltage of a-rnSi:H TFTs have positive shift due to extra danglingrnbond formation in a-Si:H layer. However, nornsignificant degradation of the subthreshold swing andrneffective mobility with tensile strain of a-Si:H TFTsrnindicates the similar level of band tail state. The metalrnwire with the width of 10 m for connection onrnflexible substrate can sustain with curvature radiusrn2.5 cm.