Effect of preparation conditions of Pd/Si dual seedlayer on the microstructure of Co/Pd{sub}n double-layered perpendicular magnetic recording media

摘要

Double-layered media consisting of a Co/Pd multilayered ([Co/Pd]{sub}n) film and a soft magnetic back layer are applicable to the future perpendicular magnetic recording system. Improvements in read-write characteristics of the media require the reduction of intergranular exchange coupling in the [Co/Pd]{sub}n film, which is often achieved by applying the proper seedlayers, such as indium-tin-oxide [1] and Pd-SiN [2], below the [Co/Pd]{sub}n recording layer. We recently applied the Pd/Si dual seedlayer of 10 nm in thickness to [Co/Pd]{sub}n single-layered media. It was revealed that N{sub}2 addition to sputtering gas in Pd upper seedlayer deposition and the post-annealing of deposited Pd/Si seedlayer successfully reduced the intergranular exchange coupling of the [Co/Pd]{sub}n film, which led to the improvements in read-write characteristics [3]. In this study, the Pd/Si dual layer is applied to the intermediate layer of [Co/Pd]{sub}n/CoZrNb double-layered media, and the effect of preparation conditions as described above on microstructure of [Co/Pd]{sub}n film and the seedlayer, and on the magnetic properties of [Co/Pd]{sub}n film were investigated.