High-density Co/Al_2O_3 core-shell nanocrystal memory

摘要

Metal/high-k dielectric core-shell nanocrystal (NC) memory capacitors were demonstrated by e-beam evaporation process. This kind of metal oxide semiconductor. (MOS) memory shows good performance in charge storage, programming and erasing speeds. Compared to Co NC memory, Co/Al_2O_3 core-shell NC memory shows improved retention performance since the additional Al_2O_3 shell layer acts as a barrier, which prevent the leakage.