UHV-EC studies of cleaning procedures for III-V compound semiconductor substrates to be used as substrates for electrodeposition

摘要

Electrodeposition of compound semiconductors on metallic substrates has already been clearly shown. In order to electrodeposit compound semiconductors on GaAs and InP substrates, a clean, well-ordered surface is required. III-V compound semiconductors (GaAs and InP) are well known to form oxide layers, and to become contaminated with organics, when exposed to atmosphere. Surface contamination on GaAs and InP can be removed using different etching solutions as well as by ion bombardment and annealing. In this investigation, with the help of UHV-EC surface analysis techniques, an attempt is made to develop an electrochemically assisted etching method to control the surface structure, morphology and stoichiometry of the substrates.