In our present study, we have developed an advanced CMP process using electrochemical system, which is called the electrochemical polishing (ECP) process. The conventional CMP process uses various slurries, abrasives, and polishing pads [1]. Recently, however, several difficulties and limitations have been reported in this CMP process, which should be solved before the use in the next generation ULSI device manufacturing. The problems are laid on unstable slurries, scratches onto the surface, various metal contaminants, the dishing features, post-cleaning difficulties, selectivity problem, and high costs for equipment and process maintenance [2].
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