首页> 外文会议>ECS Meeting >Review on our recent research activities on sol-gel derived highly textured barium strontium titanate thin films for microwave dielectric applications
【24h】

Review on our recent research activities on sol-gel derived highly textured barium strontium titanate thin films for microwave dielectric applications

机译:综述我们最近的溶胶 - 凝胶的研究活动推导出高度纹理的钛酸钡薄膜,用于微波介质应用

获取原文

摘要

Barium strontium titanate (BST) thin films are attractive candidate for dynamic random access memories (DRAM) and frequency agile microwave electronics (FAME). For DRAM applications synthesis of polycrystalline thin films is sufficient, whereas for microwave dielectric applications highly textured or epitaxially grown BST thin films are required as the presence of high angle grain boundaries in polycrystalline films increases the dielectric loss and consequently limits the device performance. We have optimized the process methodology to synthesize highly textured BST thin films on lattice matched strontium titanate (STO) and lanthanum aluminate (LAO) substrates by using sol-gel technique. The high dielectric tunability and low dielectric loss of these films were attractive to fabricate eight element coupled micro-strip phase shifters with figure of merit 44o/db. We have adopted several novel approaches to improve the dielectric characteristics of textured BST thin films. As for example, uniform manganese (Mn) doping in BST lattice was found to improve the degree of phase shift with the simultaneous increase of insertion loss and as a result there is no effective improvement in the figure of merit, which remains in the range of 33-44o/db. Graded Mn doping, on the other hand, has been demonstrated as a promising approach to reduce the temperature coefficient of capacitance (TCC), loss tangent and leakage current of BST thin films. Alternate layer deposition of hetero-structured magnesium oxide (MgO): BST thin films is demonstrated to be another approach to synthesize dielectric films with a higher figure of merit for microwave dielectric applications. Although the dielectric constant and tunability are modified by MgO insertion, the dramatic reduction in the dielectric loss tangent effectively increased the figure of merit of the hetero-structured thin films as compared to pure BST films.
机译:钛酸锶钡(BST)薄膜是动态随机存取存储器(DRAM)和频率敏捷微波电子(FAME)的有吸引力的候选者。对于DRAM应用,多晶薄膜的合成是足够的,而对于微波介电应用,作为多晶膜中的高角度晶界的存在,需要高纹理或外延生长的BST薄膜,因此增加了介电损耗并因此限制了器件性能。我们优化了通过使用溶胶 - 凝胶技术在晶格匹配的钛酸锶(STO)和镧铝酸盐(LaO)基板上合成高度纹理的BST薄膜的过程方法。这些薄膜的高介电可调性和低介电损耗是具有制造八个元素耦合的微带相移器,其具有优异44O / dB的图。我们采用了几种新方法来提高纹理BST薄膜的介电特性。例如,发现在BST晶格中掺杂的均匀锰(MN)掺杂,以提高插入损失的同时增加的相移程度,因此没有有效的改善的优点,仍然存在于33-440 / dB。另一方面,分级Mn掺杂已被证明是减少电容温度系数(TCC),BST薄膜的损耗和漏电流的有希望的方法。杂交结构氧化镁(MgO)的交替层沉积:BST薄膜被证明是一种合成介电膜的另一种方法,具有更高的微波介电应用的优点。尽管通过MgO插入修改介电常数和可调节性,但与纯BST薄膜相比,介电损耗切线的显着降低有效地增加了杂结构化薄膜的优点。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号