A study on surface morphology of Si thin film grown by temperature modulation molecular layer epitaxy method

摘要

Si thin epitaxial layers were grown by a temperature modulation Si molecular-layer epitaxy (TM Si MLE) method using Si_2H_6 gas. The surface was observed using a high-resolution field-emission scanning electron microscope (FE-SEM). The surface morphology changed significantly from a three-dimensional island feature to a two-dimensional flat surface with lowering of the modulated temperature from 530 °C to 460 °C. In conjunction with the in situ observation of the surface hydrogen desorption reaction, the mechanism of the change in the surface morphology was examined.