Multiscale modeling of stress-mediated diffusion in silicon-volume tensors

摘要

In a previous paper, we presented a general theoretical treatment of the effect of stress on defect diffusion in Si (M. S. Daw, W. Windl, N. N. Carlson, M. Laudon, and M. P. Masquelier, to be published in Phys. Rev. B). In this paper, we discuss the calculation of the parameters governing the stress dependence of the diffusivity, which are volume quantities, and present the fully anisotropic volume tensor for vacancy formation in Si.