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Recent Advances in Integral Passives Research at Georgia Tech

机译:Georgia Tech中整体被动研究的最新进展

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This paper presents the recent status in the design, materials development, and high frequency characterization of integral passive components (such as capacitors, and inductors) targeted for DECT (1.8 GHz) and Bluetooth (2.4 GHz) applications. The substrate of interest for this research is a low-cost organic based material such as FR-4. For the first time, a maximum Q of 170 was measured for a 1.6nH inductor at 2.4GHz on an organic substrate with a self-resonance frequency of 4.6GHz within an area of 3.5mm~2. Using polymer/ceramic nanocomposites that are compatible with the FR-4 substrate, a capacitance density of ~30 nF/cm~2 has been obtained. Moreover, a capacitance density of > 500 nF/cm~2 (100 KHz) is being reported for the first time using a novel hydrothermally grown barium titanate film on titanium substrate. MOCVD grown lead free thin film dielectrics showed a capacitance value in excess of 200 nF/cm~2 at ~1 MHz. Integration of passives components on an organic platform is being pursued with different prototype test vehicles to meet Bluetooth (2.8 GHz) specifications.
机译:本文内容显示最新的设计状态,材料的开发,以及整体无源元件的高频特性(如电容器和电感器)针对DECT(1.8GHz的)和蓝牙(2.4 GHz)的应用程序。用于该研究感兴趣的底物是一种低成本的有机基于这样的材料如FR-4。首次,对于1.6nH电感器,测定为2.4GHz与4.6GHz的为3.5mm〜2的区域内的自谐振频率在有机基板上的170最大Q。使用聚合物/陶瓷复合材料是用FR-4基板,的电容密度兼容〜30 NF /厘米已经获得〜2。此外,的电容密度> 500 NF /厘米〜2(100千赫兹)是使用水热生长的钛酸钡膜的钛基板上的新颖的被报告的第一次。 MOCVD生长无铅薄膜介质超过200 NF /厘米〜2在约1兆赫显示的电容值。无源组件上的有机平台集成与不同的原型测试车辆进行,以满足蓝牙(2.8千兆赫)的规格。

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