Characterization and deployment of large format, fully depleted, back- illuminated, p-channel CCDs for precision astronomy

摘要

We present new characterization results for a large format, 15 μm pixel pitch, 2kx4k format, p-channel CCD fabricated on high-resistivity silicon at Lawrence Berkeley National Laboratory. The fully-depleted device is 300 μm thick and backside illuminated utilizing 4-side buttable packaging. We report on measurements of standard operating characteristics including charge transfer efficiency, readout noise, cosmetics performance, dark current, and well depth. We have also made preliminary measurements of the device's x-Ray energy resolution and tests of device linearity.