BACK- ILLUMINATED CMOS OR CCD IMAGING DEVICE STRUCTURE

摘要

A back-illuminated CMOS or CCD imaging device structure. An epitaxial layer (130) forming the anode of the photodiode, is connected with a passivation layer (210). Light, passing through the passivation layer, is converted inside the epitaxial layer to photoelectrons and collected by the imaging device. A semiconductor well (120) in the epitaxial layer on the opposite side of the passivation layer forms the cathode of the photodiode. Light does not need to pass through a thick interlayer dielectric (160) isolating the metal interconnects (150).