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Structure for implementation of back-illuminated CMOS or CCD imagers
Structure for implementation of back-illuminated CMOS or CCD imagers
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机译:用于实现背照式CMOS或CCD成像器的结构
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摘要
A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.
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