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Fully depleted back illuminated CCD

机译:完全耗尽的背照式CCD

摘要

A backside illuminated charge coupled device (CCD) is formed of a relatively thick high resistivity photon sensitive silicon substrate, with frontside electronic circuitry, and an optically transparent backside ohmic contact for applying a backside voltage which is at least sufficient to substantially fully deplete the substrate. A greater bias voltage which overdepletes the substrate may also be applied. One way of applying the bias voltage to the substrate is by physically connecting the voltage source to the ohmic contact. An alternate way of applying the bias voltage to the substrate is to physically connect the voltage source to the frontside of the substrate, at a point outside the depletion region. Thus both frontside and backside contacts can be used for backside biasing to fully deplete the substrate. Also, high resistivity gaps around the CCD channels and electrically floating channel stop regions can be provided in the CCD array around the CCD channels. The CCD array forms an imaging sensor useful in astronomy.
机译:背照式电荷耦合器件(CCD)由具有正面电子电路的相对较厚的高电阻率光子敏感硅衬底和用于施加背电压的光学透明背欧姆接触形成,该背电压至少足以基本完全耗尽该衬底。也可以施加使衬底耗尽的更大的偏置电压。将偏置电压施加到衬底的一种方式是通过将电压源物理地连接到欧姆接触。将偏置电压施加到衬底的另一种方法是在耗尽区外部的一点上将电压源物理连接到衬底的正面。因此,正面和背面触点均可用于背面偏置,以完全耗尽基板。而且,可以在CCD通道周围的CCD阵列中提供CCD通道周围的高电阻率间隙和电浮动通道停止区域。 CCD阵列构成了在天文学中有用的成像传感器。

著录项

  • 公开/公告号US6259085B1

    专利类型

  • 公开/公告日2001-07-10

    原文格式PDF

  • 申请/专利权人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;

    申请/专利号US20000504315

  • 发明设计人 STEPHEN EDWARD HOLLAND;

    申请日2000-02-15

  • 分类号H01S401/40;H01L271/48;

  • 国家 US

  • 入库时间 2022-08-22 01:03:54

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