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Functional Self-Assembled Monolayers for Large Photoinduced Charge Transfer in Organic Field-Effect Transistors

机译:用于有机场效应晶体管中大型光胁迫电荷转移的功能性自组装单层

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Here we describe a structure designed to optimize photoinduced charge transfer in thin film devices. Bulk composite structures produce large effects in optical spectroscopy, in which photoluminescence is quenched by rapid charge transfer to an electron acceptor. Thin films exhibiting photoinduced transfer have traditionally been envisioned for photovoltaic devices using bulk mixtures of semiconductors and molecules with electron acceptors.,3 Bulk composite photoinduced charge transfer materials produce a much smaller effect in field-effect transistor (FET) structures than photovoltaics. In FETs, because only a nanometer-scale thickness of material contributes to charge transport, the effect of a bulk composite is limited. Intramolecular charge transfer in a bifunctional spiro compound in a FET configuration, for example, have shown a shift in the FET threshold voltage VT shift of only 20 to 30 V. In addition, the electrostatic complexity of bulk composites makes accurate measurements of the induced charge densities difficult. We can get a clearer view of photoinduced charge transfer mechanisms by designing controlled interfaces.
机译:在这里,我们描述了一种旨在优化薄膜器件中的光导电转移的结构。块状复合结构在光学光谱中产生很大的效果,其中通过快速电荷转移到电子受体淬火光致发光。具有传统上,薄膜传统上被设想用于使用具有电子受体的半导体和分子的体积混合物的光伏器件。,3个散装复合光致电荷转移材料在场效应晶体管(FET)结构中产生比光伏的效果更小。在FET中,因为只有纳米刻度的材料厚度有助于电荷运输,因此散装复合材料的效果受到限制。例如,在FET构造中,在FET构造中的分子分子电荷转移,例如,在FET阈值电压Vt偏移中仅为20至30V的偏移。此外,散装复合材料的静电复杂性能够精确测量诱导电荷密度困难。我们可以通过设计受控接口来获得光漏电荷传输机制的更清晰的视图。

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