STUDY OF OXIDE CHARGE BY X-RAY PHOTOELECTRON SPECTROSCOPIC AND C-V MEASUREMENTS

摘要

This paper demonstrates the comparison of X-ray photoelectron spectroscopic (XPS) measurements and Capacitance-Voltage (C-V) measurements for thin SiO_2 (6-nm) on Si substrate after plasma reactive ion etching (RIE).Two types of Si surface were measured; that is, covered with SiO_2 mask and exposed to plasma directly during plasma RIE. The oxide fixed charge and the interface traps are obtained by C-V measurements using super low frequency (0.1 Hz) and high frequency (1MHz) measurements. In XPS measurement, the oxide fixed charge shifts Si-O peak to higher binding energy, and XPS measurements agree with the results of calculation of flat band shifts from C-V measurements.