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X-RAY INCIDENT ANGLE SETTING METHOD IN PHOTOELECTRON SPECTROSCOPE, AND PHOTOELECTRON SPECTROSCOPE

机译:光电子学中的X射线入射角设定方法及光电子学

摘要

PROBLEM TO BE SOLVED: To set an X-ray incident angle to a total reflection critical angle within a short time.;SOLUTION: An photoelectron and a secondary electron are emitted from a sample 7 by X-ray irradiation, and the secondary electron is detected by a secondary electron detector 15. A detected secondary electron signal therein is fed to a voltmeter 17 via an amplifier 16 to display in the voltmeter 17 as a voltage value an amount of the secondary electron emitted from the sample 7. An operator controls an inclination adjusting means 11 while watching the voltage value displayed in the voltmeter 17, and controls the means 11 to maximize the voltage value, i.e., to maximize the emitted amount of the secondary electron. A tilt stage 10 stops by this control in a position where an X-ray incident angle gets consistent with a total reflection critical angle.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:在短时间内将X射线入射角设置为全反射临界角。解决方案:通过X射线辐照从样品7发出光电子和二次电子,并且二次电子是被二次电子检测器15检测到的二次电子信号通过放大器16被馈送到电压表17,以在电压表17中显示从样品7发出的二次电子的量作为电压值。倾斜调节装置11在观察电压表17中显示的电压值的同时,控制装置11以使电压值最大化,即,使二次电子的发射量最大化。通过该控制,倾斜工作台10停止在X射线入射角与全反射临界角一致的位置。版权所有:(C)2000,JPO

著录项

  • 公开/公告号JP2000097888A

    专利类型

  • 公开/公告日2000-04-07

    原文格式PDF

  • 申请/专利权人 JEOL LTD;

    申请/专利号JP19980269099

  • 发明设计人 SAKAI YUJI;

    申请日1998-09-24

  • 分类号G01N23/227;

  • 国家 JP

  • 入库时间 2022-08-22 01:58:11

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