Structural study of electrochemically deposited copper on p-GaAs(001) by atomic force microscopy, surface X-ray absorption fine structure, and optical reflectance and scattering measurements

摘要

The structure of electrochemically deposited Cu on p-GaAs(001) was investigated using Atomic Force Microscopy (AFM), X-ray Absorption Fine Structure (XAFS), and optical reflectance and scattering measurements. The XAFS data demonstrated that Cu microclusters were initially formed on GaAs. The AFM measurements showed that how the Cu deposition proceeded strongly depended on the applied potential and the concentration of Cu~(2+) ions in solution. Atomic arrangements corresponding to Cu(111)-(1 * 1) and GaAs(001)-(1 * 1) were observed on top of the Cu deposits and in the regions between the Cu deposits, respectively. The results of the optical reflectance and scattering measurements supported the AFM results at a macroscopic level.