GaAs/AlxOy photonic bandgap material fabrication and characterization

摘要

A relatively simple technique for fabrication of GaAs-based quasi-3D photonic crystals has been investigated. Selective impurity-induced layer disordering and wet oxidation techniques are utilized. The feasibility of this technique is successfully demonstrated and a photonic bandgap material with its bandgap around 1.18 $mu@m has been fabricated. The electro-optic coefficients have been measured for the first time in such a medium. The process is reproducible an lends itself to integration with other optoelectronic and electronic devices on the same substrate, which might be required for pumping, electrical injection or other functions.