New Generation of Reactive Pre-Clean Prior to Barrier Seed Deposition to Preserve ULK Integrity

摘要

Advanced interconnections development requires introduction of porous ultra low k (ULK) dielectrics enhancing product performances through parasitic capacitance reduction. Due to its high carbon content, ULK dielectric is more sensitive to plasma treatment during interconnection build up [1]. Pre clean process prior to barrier/seed deposition is a potential detractor for ULK integrity.